Infineon · FETs & Power MOSFETs · MPN IMWH170R650M1XKSA1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 8.1nC |
| Drain to Source Voltage | 1.7kV |
| Output Capacitance(Coss) | 15pF |
| Current - Continuous Drain(Id) | 7.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Pd - Power Dissipation | 88W |
| RDS(on) | 650mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 337pF |
1.7kV 7.5A 5.7V 88W 650mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS