Infineon IMWH170R650M1XKSA1

Infineon · FETs & Power MOSFETs · MPN IMWH170R650M1XKSA1

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Specifications

Configuration-
Gate Charge(Qg)8.1nC
Drain to Source Voltage1.7kV
Output Capacitance(Coss)15pF
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.7V
Pd - Power Dissipation88W
RDS(on)650mΩ
Reverse Transfer Capacitance (Crss@Vds)1pF
Number1 N-channel
Input Capacitance(Ciss)337pF

Technical details

1.7kV 7.5A 5.7V 88W 650mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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