Infineon · FETs & Power MOSFETs · MPN IMW65R107M1HXKSA1
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| Gate Charge(Qg) | 15nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 75pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 75W |
| RDS(on) | 142mΩ@18V |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 496pF |
650V 20A 3.5V 75W 142mΩ@18V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS