Infineon IMW65R072M1H

Infineon · FETs & Power MOSFETs · MPN IMW65R072M1H

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)22nC
Current - Continuous Drain(Id)26A
Output Capacitance(Coss)112pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5.7V
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)94mΩ
Number1 N-channel
Input Capacitance(Ciss)744pF
TypeN-Channel

Technical details

650V 26A 5.7V 94mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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