Infineon · FETs & Power MOSFETs · MPN IMW65R027M1HXKSA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 62nC |
| Output Capacitance(Coss) | 317pF |
| Current - Continuous Drain(Id) | 47A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Pd - Power Dissipation | 189W |
| RDS(on) | 34mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.131nF |
| Type | N-Channel |
650V 47A 5.7V 189W 34mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS