Infineon · FETs & Power MOSFETs · MPN IMW65R020M2HXKSA1
No reviews yet — be the first to review Infineon IMW65R020M2HXKSA1.
| Gate Charge(Qg) | 57nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 197pF |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 273W |
| RDS(on) | 24mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 11.5pF |
| Input Capacitance(Ciss) | 2.038nF |
650V 273W Through Hole TO-247-3