Infineon · FETs & Power MOSFETs · MPN IMW120R350M1HXKSA1
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| Gate Charge(Qg) | 5.3nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 10pF |
| Current - Continuous Drain(Id) | 4.7A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| RDS(on) | 350mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 182pF |
| Type | N-Channel |
1.2kV 4.7A 5.7V 60W 350mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS