Infineon IMW120R045M1

Infineon · FETs & Power MOSFETs · MPN IMW120R045M1

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Specifications

Gate Charge(Qg)52nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)115pF
Current - Continuous Drain(Id)52A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.7V
Pd - Power Dissipation228W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)45mΩ
Number1 N-channel
Input Capacitance(Ciss)1.9nF
TypeN-Channel

Technical details

N-Channel 1.2kV 52A 228W Through Hole TO-247-3

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