Infineon IMW120R030M1H

Infineon · FETs & Power MOSFETs · MPN IMW120R030M1H

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Specifications

Gate Charge(Qg)63nC
Configuration-
Drain to Source Voltage1.2kV
Output Capacitance(Coss)116pF
Current - Continuous Drain(Id)56A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation227W
RDS(on)30mΩ@18V
Reverse Transfer Capacitance (Crss@Vds)13pF
Number1 N-channel
Input Capacitance(Ciss)2.12nF

Technical details

N-Channel 1.2kV 56A 227W Through Hole TO-247-3

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