Infineon · FETs & Power MOSFETs · MPN IMW120R007M1HXKSA1
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| Drain to Source Voltage | 1.2kV |
|---|---|
| Gate Charge(Qg) | 220nC |
| Current - Continuous Drain(Id) | 225A |
| Output Capacitance(Coss) | 420pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.2V |
| Pd - Power Dissipation | 750W |
| RDS(on) | 9.9mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.17uF |
| Type | N-Channel |
1.2kV 225A 5.2V 750W 9.9mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS