Infineon · FETs & Power MOSFETs · MPN IMT65R107M1HXUMA1
No reviews yet — be the first to review Infineon IMT65R107M1HXUMA1.
| Gate Charge(Qg) | 15nC@400V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 75pF |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Pd - Power Dissipation | 138W |
| RDS(on) | 141mΩ@18V |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF |
| Input Capacitance(Ciss) | 496pF |
650V 26A 5.7V 138W 141mΩ@18V HSOF-8-1 Single FETs, MOSFETs RoHS