Infineon · FETs & Power MOSFETs · MPN IMT65R060M2HXUMA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 19nC |
| Current - Continuous Drain(Id) | 41.4A |
| Output Capacitance(Coss) | 65pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 208W |
| RDS(on) | 73mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 669pF |
| Type | N-Channel |
650V 41.4A 5.6V 208W 73mΩ 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS