Infineon · FETs & Power MOSFETs · MPN IMT65R040M2HXUMA1
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| Gate Charge(Qg) | 28nC |
|---|---|
| Configuration | Half-Bridge |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 96pF |
| Current - Continuous Drain(Id) | 58.7A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 277W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF |
| RDS(on) | 49mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 997pF |
650V 58.7A 5.6V 277W 49mΩ 1 N-channel N-Channel HSOF-8 Single FETs, MOSFETs RoHS