Infineon · FETs & Power MOSFETs · MPN IMT65R030M1HXUMA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 49nC |
| Output Capacitance(Coss) | 246pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Pd - Power Dissipation | 294W |
| RDS(on) | 42mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| Input Capacitance(Ciss) | 1.643nF |
650V 5.7V 294W 42mΩ HSOF-8-1 Single FETs, MOSFETs RoHS