Infineon · FETs & Power MOSFETs · MPN IMT65R022M1HXUMA1
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| Output Capacitance(Coss) | 262pF |
|---|---|
| Pd - Power Dissipation | 375W |
| Configuration | - |
| Gate Charge(Qg) | 67nC |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 22mΩ@18V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.288nF |
375W 650V 4.5V 22mΩ@18V 1 N-channel N-Channel HSOF-8-1 Single FETs, MOSFETs RoHS