Infineon · FETs & Power MOSFETs · MPN IMT65R020M2HXUMA1
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| Configuration | Half-Bridge |
|---|---|
| Gate Charge(Qg) | 57nC |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 196pF |
| Current - Continuous Drain(Id) | 105A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 440W |
| RDS(on) | 24mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 11.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.038nF |
650V 105A 5.6V 440W 24mΩ 1 N-channel N-Channel HSOF-8 Single FETs, MOSFETs RoHS