Infineon · FETs & Power MOSFETs · MPN IMT65R010M2HXUMA1
No reviews yet — be the first to review Infineon IMT65R010M2HXUMA1.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 113nC |
| Current - Continuous Drain(Id) | 168A |
| Output Capacitance(Coss) | 386pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 681W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 13.1mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.001nF |
| Type | N-Channel |
650V 168A 5.6V 681W 13.1mΩ 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS