Infineon IMT40R025M2HXTMA1

Infineon · FETs & Power MOSFETs · MPN IMT40R025M2HXTMA1

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Specifications

Gate Charge(Qg)36nC
Drain to Source Voltage400V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)68A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.6V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)32.1mΩ
Number1 N-channel
Input Capacitance(Ciss)1.69nF
TypeN-Channel

Technical details

400V 68A 214W HSOF-8

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