Infineon IMT40R011M2HXTMA1

Infineon · FETs & Power MOSFETs · MPN IMT40R011M2HXTMA1

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Specifications

Gate Charge(Qg)85nC
Drain to Source Voltage400V
Current - Continuous Drain(Id)144A
Output Capacitance(Coss)410pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.6V
Pd - Power Dissipation429W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)11.3mΩ
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

400V 144A 429W HSOF-8

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