Infineon · FETs & Power MOSFETs · MPN IMSQ120R053M2HHXUMA1
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 45A |
| Pd - Power Dissipation | 234W |
| RDS(on) | 53mΩ |
| Gate Threshold Voltage (Vgs(th)) | 5.1V |
| Drain to Source Voltage | 1.2kV |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.01nF |
| Gate Charge(Qg) | 28nC |
| Operating Temperature | -55℃~+175℃ |
45A 234W 53mΩ 5.1V 1 N-channel HDSOP-16 FET, MOSFET Arrays RoHS