Infineon · FETs & Power MOSFETs · MPN IMSQ120R040M2HHXUMA1
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| Current - Continuous Drain(Id) | 57A |
|---|---|
| RDS(on) | 40mΩ |
| Pd - Power Dissipation | 290W |
| Gate Threshold Voltage (Vgs(th)) | 5.1V |
| Drain to Source Voltage | 1.2kV |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.31nF |
| Gate Charge(Qg) | 36nC |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 55pF |
57A 40mΩ 290W 5.1V 1 N-channel PG-HDSOP-16-U03 FET, MOSFET Arrays RoHS