Infineon · FETs & Power MOSFETs · MPN IMLT65R050M2HXTMA1
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| Configuration | Half-Bridge |
|---|---|
| Drain to Source Voltage | 650V |
| Gate Charge(Qg) | 22nC |
| Output Capacitance(Coss) | 77pF |
| Current - Continuous Drain(Id) | 47A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 227W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.7pF |
| RDS(on) | 62mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 790pF |
650V 47A 5.6V 227W 62mΩ 1 N-channel N-Channel PG-HDSOP-16 Single FETs, MOSFETs RoHS