Infineon · FETs & Power MOSFETs · MPN IMLT65R026M2HXTMA1
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| Configuration | Half-Bridge |
|---|---|
| Gate Charge(Qg) | 42nC |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 145pF |
| Current - Continuous Drain(Id) | 8.257kA |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 365W |
| RDS(on) | 33mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 8.6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.499nF |
650V 8.257kA 5.6V 365W 33mΩ 1 N-channel N-Channel HDSOP-16 Single FETs, MOSFETs RoHS