Infineon · FETs & Power MOSFETs · MPN IMLT65R020M2HXTMA1
No reviews yet — be the first to review Infineon IMLT65R020M2HXTMA1.
| Gate Charge(Qg) | 57nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 197pF |
| Current - Continuous Drain(Id) | 107A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 454W |
| RDS(on) | 24mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 11.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.038nF |
| Type | N-Channel |
650V 107A 5.6V 454W 24mΩ 1 N-channel N-Channel SOP-16 Single FETs, MOSFETs RoHS