Infineon · FETs & Power MOSFETs · MPN IMDQ75R060M2HXTMA1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 20nC |
| Drain to Source Voltage | 840V |
| Output Capacitance(Coss) | 64pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 128W |
| RDS(on) | 78mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 3.6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 716pF |
840V 30A 5.6V 128W 78mΩ 1 N-channel N-Channel HDSOP-22 Single FETs, MOSFETs RoHS