Infineon · FETs & Power MOSFETs · MPN IMDQ75R027M1HXUMA1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 49nC |
| Drain to Source Voltage | 750V |
| Current - Continuous Drain(Id) | 64A |
| Output Capacitance(Coss) | 144pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 273W |
| RDS(on) | 36mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.668nF |
750V 64A 5.6V 273W 36mΩ 1 N-channel N-Channel SOP-22 Single FETs, MOSFETs RoHS