Infineon · FETs & Power MOSFETs · MPN IMDQ75R008M1HXUMA1
No reviews yet — be the first to review Infineon IMDQ75R008M1HXUMA1.
| Gate Charge(Qg) | 178nC |
|---|---|
| Drain to Source Voltage | 750V |
| Output Capacitance(Coss) | 510pF |
| Current - Continuous Drain(Id) | 173A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 625W |
| RDS(on) | 10.6mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.135nF |
| Type | N-Channel |
750V 173A 5.6V 625W 10.6mΩ 1 N-channel N-Channel HDSOP-22 Single FETs, MOSFETs RoHS