Infineon · FETs & Power MOSFETs · MPN IMDQ75R007M2HXTMA1
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| Configuration | Half-Bridge |
|---|---|
| Gate Charge(Qg) | 171nC |
| Drain to Source Voltage | 750V |
| Output Capacitance(Coss) | 502pF |
| Current - Continuous Drain(Id) | 222A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 789W |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| RDS(on) | 8.5mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.922nF |
750V 222A 5.6V 789W 8.5mΩ 1 N-channel N-Channel Q-DPAK Single FETs, MOSFETs RoHS