Infineon · FETs & Power MOSFETs · MPN IMCQ120R040M2HXTMA1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 42.4nC |
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 56A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.1V |
| Pd - Power Dissipation | 288W |
| RDS(on) | 39.6mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 4.7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.66nF |
1.2kV 56A 5.1V 288W 39.6mΩ 1 N-channel N-Channel PG-HDSOP-22-3 Single FETs, MOSFETs RoHS