Infineon · FETs & Power MOSFETs · MPN IMCQ120R026M2HXTMA1
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Gate Charge(Qg) | 63.4nC |
| Output Capacitance(Coss) | 85pF |
| Current - Continuous Drain(Id) | 82A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.1V |
| Pd - Power Dissipation | 405W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 25.4mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.54nF |
1.2kV 82A 5.1V 405W 25.4mΩ 1 N-channel N-Channel PG-HDSOP-22-U03 Single FETs, MOSFETs RoHS