Infineon · FETs & Power MOSFETs · MPN IMCQ120R007M2HXTMA1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 197.2nC |
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 257A |
| Output Capacitance(Coss) | 287pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.1V |
| Pd - Power Dissipation | 1.172kW |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 7.5mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.44nF |
1.2kV 257A 5.1V 1.172kW 7.5mΩ 1 N-channel N-Channel HDSOP-22 Single FETs, MOSFETs RoHS