Infineon · FETs & Power MOSFETs · MPN IMBG65R075M2HXTMA1
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| Configuration | Half-Bridge |
|---|---|
| Gate Charge(Qg) | 14.9nC |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 57pF |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 124W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.6pF |
| RDS(on) | 95mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 516pF |
650V 28A 5.6V 124W 95mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS