Infineon · FETs & Power MOSFETs · MPN IMBG65R048M1HXTMA1
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| Gate Charge(Qg) | 33nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 168pF |
| Current - Continuous Drain(Id) | 45A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Pd - Power Dissipation | 183W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 64mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.118nF |
| Type | N-Channel |
650V 45A 5.7V 183W 64mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS