Infineon · FETs & Power MOSFETs · MPN IMBG65R033M2H
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| Gate Charge(Qg) | 34nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 117pF |
| Current - Continuous Drain(Id) | 58A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 227W |
| RDS(on) | 41mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| Input Capacitance(Ciss) | 1.214nF |
650V 58A 227W TO-263-7