Infineon · FETs & Power MOSFETs · MPN IMBG65R022M1HXTMA1
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| Gate Charge(Qg) | 67nC@18V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 30mΩ@18V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.288nF |
650V 50A 3.5V 300W 30mΩ@18V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS