Infineon · FETs & Power MOSFETs · MPN IMBG65R015M2HXTMA1
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| Gate Charge(Qg) | 79nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 269pF |
| Current - Continuous Drain(Id) | 115A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 416W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 18mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.792nF |
| Type | N-Channel |
650V 115A 416W TO-263-7