Infineon · FETs & Power MOSFETs · MPN IMBG65R010M2H
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| Configuration | Half-Bridge |
|---|---|
| Gate Charge(Qg) | 112nC |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 158A |
| Output Capacitance(Coss) | 386pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 535W |
| RDS(on) | 13.1mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.001nF |
650V 158A 5.6V 535W 13.1mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS