Infineon · FETs & Power MOSFETs · MPN IMBG65R007M2HXTMA1
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| Gate Charge(Qg) | 179nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 238A |
| Output Capacitance(Coss) | 613pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 789W |
| RDS(on) | 8.5mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.359nF |
| Type | N-Channel |
650V 238A 789W TO-263-7