Infineon · FETs & Power MOSFETs · MPN IMBG40R036M2HXTMA1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 26nC |
| Drain to Source Voltage | 400V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 167W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 45.7mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.17nF |
400V 50A 5.6V 167W 45.7mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS