Infineon · FETs & Power MOSFETs · MPN IMBG40R015M2HXTMA1
No reviews yet — be the first to review Infineon IMBG40R015M2HXTMA1.
| Configuration | - |
|---|---|
| Drain to Source Voltage | 400V |
| Gate Charge(Qg) | 62nC |
| Current - Continuous Drain(Id) | 111A |
| Output Capacitance(Coss) | 300pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 341W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 19.1mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.73nF |
400V 111A 5.6V 341W 19.1mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS