Infineon · FETs & Power MOSFETs · MPN IMBG40R011M2HXTMA1
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| Drain to Source Voltage | 400V |
|---|---|
| Gate Charge(Qg) | 85nC |
| Output Capacitance(Coss) | 410pF |
| Current - Continuous Drain(Id) | 133A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 429W |
| RDS(on) | 14.4mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
| Type | N-Channel |
400V 133A 5.6V 429W 14.4mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS