Infineon · FETs & Power MOSFETs · MPN IMBG120R350M1HXTMA1
No reviews yet — be the first to review Infineon IMBG120R350M1HXTMA1.
| Drain to Source Voltage | 1.2kV |
|---|---|
| Gate Charge(Qg) | 5.9nC |
| Output Capacitance(Coss) | 9pF |
| Current - Continuous Drain(Id) | 4.7A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.94pF |
| RDS(on) | 350mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 196pF |
| Type | N-Channel |
1.2kV 4.7A 5.7V 65W 350mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS