Infineon · FETs & Power MOSFETs · MPN IMBG120R234M2HXTMA1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 7.9nC |
| Drain to Source Voltage | - |
| Output Capacitance(Coss) | 9.6pF |
| Current - Continuous Drain(Id) | 8.1A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.1V |
| Pd - Power Dissipation | 80W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.8pF |
| RDS(on) | 233.9mΩ |
| Number | - |
| Input Capacitance(Ciss) | 290pF |
8.1A 5.1V 80W 233.9mΩ TO-263-7 Single FETs, MOSFETs RoHS