Infineon · FETs & Power MOSFETs · MPN IMBG120R116M2HXTMA1
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| Gate Charge(Qg) | 14.4nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 21.2A |
| Output Capacitance(Coss) | 19pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.1V |
| Pd - Power Dissipation | 123W |
| RDS(on) | 115.7mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 1.6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 500pF |
| Type | N-Channel |
1.2kV 21.2A 123W TO-263-7