Infineon · FETs & Power MOSFETs · MPN IMBG120R090M1HXTMA1
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| Gate Charge(Qg) | 23nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 39pF |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Pd - Power Dissipation | 136W |
| RDS(on) | 125mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 4.3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 763pF |
| Type | N-Channel |
1.2kV 26A 5.7V 136W 125mΩ 1 N-channel N-Channel TO-263-7-12 Single FETs, MOSFETs RoHS