Infineon · FETs & Power MOSFETs · MPN IMBG120R078M2HXTMA1
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| Gate Charge(Qg) | 20.6nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 29A |
| Output Capacitance(Coss) | 28pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 158W |
| RDS(on) | 78.1mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 2.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.7nF |
| Type | N-Channel |
1.2kV 29A 4.2V 158W 78.1mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS