Infineon · FETs & Power MOSFETs · MPN IMBG120R053M2HXTMA1
No reviews yet — be the first to review Infineon IMBG120R053M2HXTMA1.
| Gate Charge(Qg) | 30nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 41pF |
| Current - Continuous Drain(Id) | 41A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 205W |
| RDS(on) | 52.6mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.01nF |
| Type | N-Channel |
1.2kV 41A 205W TO-263-7