Infineon · FETs & Power MOSFETs · MPN IMBG120R045M1HXTMA1
No reviews yet — be the first to review Infineon IMBG120R045M1HXTMA1.
| Gate Charge(Qg) | 46nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 70pF |
| Current - Continuous Drain(Id) | 47A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Pd - Power Dissipation | 227W |
| RDS(on) | 45mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 7.3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.527nF |
| Type | N-Channel |
1.2kV 47A 5.7V 227W 45mΩ 1 N-channel N-Channel TO-263-7-12 Single FETs, MOSFETs RoHS