Infineon IMBG120R034M2HXTMA1

Infineon · FETs & Power MOSFETs · MPN IMBG120R034M2HXTMA1

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)45nC
Current - Continuous Drain(Id)58A
Output Capacitance(Coss)64pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.1V
Pd - Power Dissipation278W
Reverse Transfer Capacitance (Crss@Vds)5.8pF
RDS(on)34mΩ
Number1 N-channel
Input Capacitance(Ciss)1.51nF
TypeN-Channel

Technical details

1.2kV 58A 5.1V 278W 34mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS

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