Infineon · FETs & Power MOSFETs · MPN IMBG120R030M1HXTMA1
No reviews yet — be the first to review Infineon IMBG120R030M1HXTMA1.
| Gate Charge(Qg) | 63nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 105pF |
| Current - Continuous Drain(Id) | 56A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 30mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.29nF |
| Type | N-Channel |
N-Channel 1.2kV 56A 300W Surface Mount TO-263-7-12