Infineon · FETs & Power MOSFETs · MPN IMBG120R026M2HXTMA1
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| Drain to Source Voltage | 1.2kV |
|---|---|
| Gate Charge(Qg) | 60nC |
| Current - Continuous Drain(Id) | 75A |
| Output Capacitance(Coss) | 85pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.1V |
| Pd - Power Dissipation | 335W |
| RDS(on) | 25.4mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 7.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.99nF |
| Type | N-Channel |
1.2kV 75A 5.1V 335W 25.4mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS